Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devices

Van-Sang Nguyen (1) , Thanh Long Le (1) , Farshid Sarrafin_ardebili (1) , Duc Ngoc To (2, 1) , Davy Colin (1) , Nicolas Clément, Jean-Paul Rouger (1) , Pierre Lefranc (1) , Yves Lembeye (1) , Jean-Daniel Arnould (2) , Bruno Allard (3) , Jean-Christophe Crébier (1)

1 G2ELab - Laboratoire de Génie Electrique de Grenoble
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 EE - Ampère, Département Energie Electrique

Based on WBG power devices operating constraints, this paper analyses and presents developments and prototyping of dedicated high side control signal level shifters. Designs take into account temperature, propagation delay deviation and high dv/dt susceptibility to deliver a generic solution able to comply with new device constraints. If silicon technology remains today the unique reliable technical solution, the implementation of gate driver in this technology is becoming very challenging. Delay deviations, signal integrity (duty cycle duration and time location) of prototypes are characterized with respect to temperature as well as dv/dt immunity.

Domaines: Energie électrique

Van-Sang Nguyen, Thanh Long Le, Farshid Sarrafin_ardebili, Duc Ngoc To, Davy Colin, et al.. Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devices. Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic. ⟨hal-01362327⟩