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Communication Dans Un Congrès Année : 2016

Design and optimization of IGBT gate drivers for high insulation voltage up to 30kV

Sokchea Am
  • Fonction : Auteur
  • PersonId : 988553
Pierre Lefranc
  • Fonction : Auteur
  • PersonId : 960120
David Frey
  • Fonction : Auteur
  • PersonId : 960121
Rachelle Hanna

Résumé

In this article, a design methodology to optimize IGBT gate drivers for high insulation voltage capability (up to 30kV) is proposed. A Pot core ferrite with circular coils transformer is used for high insulation capabilities. The insulation voltage level is defined by the air gap length and the dielectric material. The pulse width modulation (PWM) signal transmission and power transmission functions of IGBT gate driver are studied and optimized. For both functions, the objective of the studies is to optimize the geometric elements of transformer and the associated electrical components by the help of a virtual prototyping tool. Therefore, the optimization results are proposed under Pareto fronts: optimization objectives for a set of the barrier insulation thickness. Finally, the experimental verifications are shown to validate the proposed methodology.
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Dates et versions

hal-01361645 , version 1 (07-09-2016)

Identifiants

  • HAL Id : hal-01361645 , version 1

Citer

Sokchea Am, Pierre Lefranc, David Frey, Rachelle Hanna. Design and optimization of IGBT gate drivers for high insulation voltage up to 30kV. Symposium de Genie Electrique, Jun 2016, Grenoble, France. ⟨hal-01361645⟩
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