O. M. Erve, G. Kioseoglou, A. T. Hanbicki, C. H. Li, B. T. Jonker et al., Comparison of Fe/Schottky and Fe/Al2O3 tunnel barrier contacts for electrical spin injection into GaAs, Applied Physics Letters, vol.84, issue.21, p.4334, 2004.
DOI : 10.1063/1.1758305

A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. Evangelou, Fermi-level pinning and charge neutrality level in germanium, Applied Physics Letters, vol.89, issue.25, p.252110, 2006.
DOI : 10.1063/1.2410241

E. S. Liu, J. Nah, K. M. Varahramyan, T. , and E. , Lateral Spin Injection in Germanium Nanowires, Nano Letters, vol.10, issue.9, pp.3297-3301, 2010.
DOI : 10.1021/nl1008663

H. Saito, S. Watanabe, Y. Mineno, S. Sharma, R. Jansen et al., Electrical creation of spin accumulation in -type germanium, Solid State Communications, vol.151, issue.17, pp.1159-1161, 2011.
DOI : 10.1016/j.ssc.2011.05.010

M. Gajdzik, C. Sürgers, M. Kelemen, and H. Löhneysen, Strongly enhanced Curie temperature in carbon-doped Mn5Ge3 films, Journal of Magnetism and Magnetic Materials, vol.221, issue.3, pp.248-254, 2000.
DOI : 10.1016/S0304-8853(00)00494-7

A. Spiesser, M. T. Dau, L. A. Michez, M. Petit, C. Coudreau et al., Boosting the Curie temperature in carbon-doped Mn<SUB align="right">5Ge<SUB align="right">3/Ge heterostructures, International Journal of Nanotechnology, vol.9, issue.3/4/5/6/7, pp.428-438, 2012.
DOI : 10.1504/IJNT.2012.045346

J. Tang, C. Y. Wang, M. H. Hung, X. Jiang, L. T. Chang et al., Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application, ACS Nano, vol.6, issue.6, pp.5710-5717, 2012.
DOI : 10.1021/nn301956m

E. Ozerden, Y. S. Ocak, A. Tombak, T. Kilicoglu, and A. Turut, Electrical and photoelectrical properties of Ag/n-type Si metal/semiconductor contact with organic interlayer, Thin Solid Films, vol.597, pp.14-18, 2015.
DOI : 10.1016/j.tsf.2015.11.013

E. E. Tanr?kulu, D. E. Y?ld?z, and A. Günen, /n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes, Physica Scripta, vol.90, issue.9, pp.95801-95832, 2015.
DOI : 10.1088/0031-8949/90/9/095801

M. Petit, L. Michez, C. E. Dutoit, S. Bertaina, V. O. Dolocan et al., Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy, Thin Solid Films, vol.589, pp.427-432, 2015.
DOI : 10.1016/j.tsf.2015.05.068
URL : https://hal.archives-ouvertes.fr/hal-01162158

T. Luong, A. Ghrib, M. T. Dau, M. A. Zrir, M. Stoffel et al., Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source, Thin Solid Films, vol.557, issue.550, pp.70-75, 2014.
DOI : 10.1016/j.tsf.2013.11.027
URL : https://hal.archives-ouvertes.fr/hal-00975160

T. Nishimura, K. Kita, and A. Toriumi, A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film, Applied Physics Express, vol.1, p.51406, 2008.
DOI : 10.1143/APEX.1.051406

E. Schubert, Journal of Vacuum Science {&} 555 Technology A: Fundamentals and device applications 8 2980 URL http, 1990.

H. J. Gossmann and E. Schubert, Delta doping in silicon, Critical Reviews in Solid State and Materials Sciences, vol.56, issue.1, pp.1-67, 1993.
DOI : 10.1063/1.104378

O. Olikh, Review and test of methods for determination of the Schottky diode parameters, Journal of Applied Physics, vol.118, issue.2, p.24502, 2015.
DOI : 10.1063/1.4926420

C. Mead, Metal-semiconductor surface barriers, Solid-State Electronics, vol.9, issue.11-12, pp.1023-1033, 1966.
DOI : 10.1016/0038-1101(66)90126-2

H. Card and E. Rhoderick, Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes, Journal of Physics D: Applied Physics, vol.4, issue.10, pp.1589-575, 1971.
DOI : 10.1088/0022-3727/4/10/319

P. Lautenschlager, P. Allen, and M. Cardona, Temperature dependence of band gaps in Si and Ge, Physical Review B, vol.31, issue.4, pp.2163-2171, 1985.
DOI : 10.1103/PhysRevB.31.2163

R. T. Tung, J. Sullivan, and E. Schrey, On the inhomogeneity of Schottky barriers, Materials Science and Engineering: B, vol.14, issue.3, pp.266-280, 1992.
DOI : 10.1016/0921-5107(92)90309-W

A. Saxena, Forward current-voltage characteristics of Schottky barriers on n-type silicon, Surface Science, vol.13, issue.1, pp.151-171, 1969.
DOI : 10.1016/0039-6028(69)90245-3

V. A. Johnson, R. Smith, and H. J. Yearian, D.C. Characteristics of Silicon and Germanium Point Contact Crystal Rectifiers. Part II. The Multicontact Theory, Journal of Applied Physics, vol.21, issue.4, pp.283-289, 1950.
DOI : 10.1063/1.1699654
URL : https://hal.archives-ouvertes.fr/in2p3-00025290

Y. Song, R. Van-meirhaeghe, and F. Whlafì-ere, On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers, Solid-State Electronics, vol.29, issue.6, pp.633-638, 1986.
DOI : 10.1016/0038-1101(86)90145-0

G. Scappucci, G. Capellini, W. Lee, and M. Simmons, Ultradense phosphorus in germanium delta-doped layers, Applied Physics Letters, vol.94, issue.16, p.162106, 2009.
DOI : 10.1063/1.3123391

F. A. Padovani and G. Sumner, Experimental Study of Gold???Gallium Arsenide Schottky Barriers, Journal of Applied Physics, vol.36, issue.12, pp.3744-3747, 1965.
DOI : 10.1063/1.1713940

F. A. Padovani and R. Stratton, Field and thermionic-field emission in Schottky barriers, Solid-State Electronics, vol.9, issue.7, pp.695-707, 1966.
DOI : 10.1016/0038-1101(66)90097-9