0.3-42.5 GHz Wideband Common Emitter Amplifier Driver Unit in 55 nm SiGe BiCMOS for 60 Gb/s Silicon Photonic Mach-Zehnder Modulator

Jeremie Prades (1, 2) , Eric Kerherve (1) , Anthony Ghiotto (1) , Denis Pache (2)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 ST-CROLLES - STMicroelectronics [Crolles]

A silicon integrated wideband common emitter amplifier driver unit in 55 nm SiGe BiCMOS technology designed for a 60 Gb/s silicon photonic segmented Mach-Zehnder Modulator (SE-MZM) is reported in this paper. It achieves a bandwidth of 42.2 GHz (0.3-42.5 GHz), allowing the transmission of an On-Off Keying (OOK) modulated optical signal on a single optical channel with a data rate of up to 60 Gb/s. For a power consumption of 125 mW, it provides a small signal gain of 18 dB and a single-ended peak-to-peak output voltage swing of up to 1.1 V on a 50 Ω output load. The die active area is as small as 204 x 137 µm2.

Mots clés: BiCMOS; HSPM; Mach-Zehnder interferometer (MZI); optical modulator driver; silicon photonic

Domaines: Electromagnétisme

Jeremie Prades, Eric Kerherve, Anthony Ghiotto, Denis Pache. 0.3-42.5 GHz Wideband Common Emitter Amplifier Driver Unit in 55 nm SiGe BiCMOS for 60 Gb/s Silicon Photonic Mach-Zehnder Modulator. 4th IEEE International NEWCAS Conference, Jun 2016, Vancouver, Canada. ⟨hal-01345722⟩