Advance in low-k cryogenic etching of porous organoscilicate : Investigation of a new gas with higher boiling point Organic (HBPO) and comparison with C4F8 - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2016

Advance in low-k cryogenic etching of porous organoscilicate : Investigation of a new gas with higher boiling point Organic (HBPO) and comparison with C4F8

Fichier non déposé

Dates et versions

hal-01344722 , version 1 (12-07-2016)

Identifiants

  • HAL Id : hal-01344722 , version 1

Citer

Floriane Leroy, Nataniel Brochu, Romain Chanson, Remi Dussart, Thomas Tillocher, et al.. Advance in low-k cryogenic etching of porous organoscilicate : Investigation of a new gas with higher boiling point Organic (HBPO) and comparison with C4F8. Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France. ⟨hal-01344722⟩
64 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More