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Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells

Abstract : Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells (CQW) grown on Si have been investigated by means of optical transmission measurements. The separate confinement of electrons and holes in the heterostructure gives rise to an anomalous Quantum Confined Stark Effect (QCSE) that can be exploited to strongly enhance the electro-refractive effect with respect to uncoupled quantum wells. A refractive index variation up to 2.3 x 10-3 has been measured at 1.5 V, with an VπLπ of 0.046 V cm. This result is very promising for the realization of an efficient and compact phase modulator based on the Ge/SiGe material system.
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https://hal.archives-ouvertes.fr/hal-01326155
Contributor : Delphine Marris-Morini <>
Submitted on : Friday, June 3, 2016 - 11:09:10 AM
Last modification on : Tuesday, August 13, 2019 - 11:10:03 AM
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Jacopo Frigerio, Vladylav Vakarin, Papichaya Chaisakul, Andrea Ballabio, Daniel Chrastina, et al.. Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells. SPIE Photonics Europe,, Apr 2016, Bruxelles, Belgium. ⟨hal-01326155⟩

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