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Ge-rich silicon germanium as a new platform for optical interconnects on silicon
Abstract : We propose germanium-rich silicon-germanium (SiGe) as a new platform for optical interconnects. The platform viability is experimentally and theoretically investigated through the realization of main building blocks of passive circuitry. Germanium-rich Si 1-x Ge x guiding layer on a graded SiGe layer is used to experimentally show 12µm radius bends by light confinement tuning at a wavelength of 1550nm. As a next step, Mach Zehnder interferometer with 10 dB extinction ratio is demonstrated. High Ge content of the proposed platform allows the coupling with Ge-based active devices, relying on a high quality epitaxial growth. Hence, the integration on Silicon of high speed and low power consumption Ge-rich active components is possible, despite the high lattice mismatch between silicon and germanium.
Cited literature [16 references]
https://hal.archives-ouvertes.fr/hal-01322121
Contributor : Delphine Marris-Morini Connect in order to contact the contributor
Submitted on : Friday, May 27, 2016 - 8:45:05 AM
Last modification on : Thursday, January 6, 2022 - 1:20:19 PM
Long-term archiving on: : Sunday, August 28, 2016 - 10:13:54 AM
Contributor : Delphine Marris-Morini Connect in order to contact the contributor
Submitted on : Friday, May 27, 2016 - 8:45:05 AM
Last modification on : Thursday, January 6, 2022 - 1:20:19 PM
Long-term archiving on: : Sunday, August 28, 2016 - 10:13:54 AM
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