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Silicon germanium on graded buffer as a new platform for optical interconnects on silicon

Abstract : We experimentally and theoretically investigate the use of silicon germanium (SiGe) on silicon substrate as a new platform for optical interconnects. The system composed of Germanium (Ge) rich Si 1-x Ge x guiding layer on a graded SiGe layer is showed to be suitable for the realization of all main building blocks of passive optical circuitry. We show experimentally at a wavelength of 1550nm that sharp 12µm radius bends can be obtained by light confinement tuning. Mach-Zehnder interferometer with more than 10 dB extinction ratio is also demonstrated. Moreover, Ge-rich Si 1-x Ge x based passive components are very interesting for their native integration with Ge-rich active optical devices. Hence, by using this new platform for optical integrated circuits, lattice mismatch between silicon and germanium is no longer a major constraint for the integration of Ge-rich active photonic components on silicon.
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Submitted on : Monday, May 30, 2016 - 7:39:35 PM
Last modification on : Thursday, January 6, 2022 - 1:20:19 PM
Long-term archiving on: : Wednesday, August 31, 2016 - 10:39:09 AM


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Vladyslav Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, et al.. Silicon germanium on graded buffer as a new platform for optical interconnects on silicon. SPIE Photonics West, Feb 2016, San Francisco, CA, United States. ⟨10.1117/12.2208661⟩. ⟨hal-01322066⟩



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