Silicon germanium on graded buffer as a new platform for optical interconnects on silicon

Vladyslav Vakarin 1 Papichaya Chaisakul 1 Jacopo Frigerio 2 Andrea Ballabio 2 Xavier Le Roux 1 Jean-René Coudevylle 1 Laurent Viviven 1 Giovanni Isella 2 Delphine Marris-Morini 1
1 IEF - Institut d'électronique fondamentale
2 Politecnico di Milano [Milan]
Abstract : We experimentally and theoretically investigate the use of silicon germanium (SiGe) on silicon substrate as a new platform for optical interconnects. The system composed of Germanium (Ge) rich Si 1-x Ge x guiding layer on a graded SiGe layer is showed to be suitable for the realization of all main building blocks of passive optical circuitry. We show experimentally at a wavelength of 1550nm that sharp 12µm radius bends can be obtained by light confinement tuning. Mach-Zehnder interferometer with more than 10 dB extinction ratio is also demonstrated. Moreover, Ge-rich Si 1-x Ge x based passive components are very interesting for their native integration with Ge-rich active optical devices. Hence, by using this new platform for optical integrated circuits, lattice mismatch between silicon and germanium is no longer a major constraint for the integration of Ge-rich active photonic components on silicon.
Keywords : Silicon photonics Germanium Waveguide Bends Mach-Zehnder interferometer
Type de document :
Communication dans un congrès
SPIE Photonics West, Feb 2016, San Francisco, CA, United States. 9753, Optical Interconnects XVI. 〈10.1117/12.2208661〉
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Soumis le : lundi 30 mai 2016 - 19:39:35
Dernière modification le : jeudi 11 janvier 2018 - 06:19:24
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Vladyslav Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, et al.. Silicon germanium on graded buffer as a new platform for optical interconnects on silicon. SPIE Photonics West, Feb 2016, San Francisco, CA, United States. 9753, Optical Interconnects XVI. 〈10.1117/12.2208661〉. 〈hal-01322066〉

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