Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells

Aurélien Morel (1) , Pierre Lefebvre (1) , Thierry Taliercio (1) , Bernard Gil (1) , Nicolas Grandjean (2) , Benjamin Damilano (2) , Jean Massies (2)

1 GES - Groupe d'étude des semiconducteurs
2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional “pseudo-donor–acceptor pairs”.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

Aurélien Morel, Pierre Lefebvre, Thierry Taliercio, Bernard Gil, Nicolas Grandjean, et al.. Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells. International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩. ⟨hal-01319596⟩