Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures

Henryk Teisseyre (1) , Tadeusz Suski (1) , S. Lepkowsky (1) , Stéphanie Anceau (2, 1) , Piotr Perlin (1) , Pierre Lefebvre (2) , Leszek Konczewicz (2) , H Hirayama (3) , Y Aoyagi (3)

1 IHPP - Institute of High Pressure Physics [Warsaw]
2 GES - Groupe d'étude des semiconducteurs
3 RIKEN - RIKEN - Institute of Physical and Chemical Research [Japon]

A study of light emission of InAlGaN based multi quantum wells (with different well widths) has been performed by means of hydrostatic pressure and time resolved measurements. Both techniques are very sensitive to the presence of the large internal electric fields in hexagonal InGaN/GaN and GaN/AlGaN heterostructures. In the present studies, we found that independently of the quantum well width the pressure shift of the light emission energy and the photoluminescence decay time show almost constant values. This observation is interpreted as an evidence of the lack of built-in electric field in the used quaternary quantum wells.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

Henryk Teisseyre, Tadeusz Suski, S. Lepkowsky, Stéphanie Anceau, Piotr Perlin, et al.. Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures. International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.764-768, ⟨10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0⟩. ⟨hal-01319469⟩