Evolution of internal electric fields with the wel thickness of quaternary InAlGaN quantum wells

Stéphanie Anceau (1, 2) , Henryk Teisseyre (2) , Tadeusz Suski (2) , S. Lepkowsky (2) , Leszek Konczewicz (1) , Pierre Lefebvre (1) , H Hirayama (3) , Y Aoyagi (3)

1 GES - Groupe d'étude des semiconducteurs
2 IHPP - Institute of High Pressure Physics [Warsaw]
3 RIKEN - RIKEN - Institute of Physical and Chemical Research [Japon]

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

Stéphanie Anceau, Henryk Teisseyre, Tadeusz Suski, S. Lepkowsky, Leszek Konczewicz, et al.. Evolution of internal electric fields with the wel thickness of quaternary InAlGaN quantum wells. Joint 19th AIRAPT - 41th EHPRG Int. Conf. on High Pressure Science and Technology , Jul 2003, Bordeaux, France. ⟨hal-01312667⟩