Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.

Henryk Teisseyre (1) , C. Skierbiszewski (1) , Boleslaw Łucznik (1) , Kamler G. (1) , Feduniewicz A. (1) , M Siekacz (1) , Pierre Valvin (2) , Pierre Lefebvre (2) , Tadeusz Suski (1) , Piotr Perlin (1) , Izabella Grzegory (1) , Sylvester Porowski (1)

1 IHPP - Institute of High Pressure Physics [Warsaw]
2 GES - Groupe d'étude des semiconducteurs

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

Henryk Teisseyre, C. Skierbiszewski, Boleslaw Łucznik, Kamler G., Feduniewicz A., et al.. Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.. 6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany. . ⟨hal-01309939⟩