Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots

Thierry Taliercio (1) , Pierre Valvin (1) , Romuald Intartaglia (1) , Vincent Sallet (2) , J.C. Harmand (2) , Thierry Guillet (1) , Pierre Lefebvre (1) , Thierry Bretagnon (1) , Bernard Gil (1)

1 GES - Groupe d'étude des semiconducteurs
2 LPN - Laboratoire de photonique et de nanostructures

We present a study of the optical properties of quantum dots based on a new family of semiconductors: III–V dilute nitrides such as (In,Ga)(N,As). Continuous wave and time resolved photoluminescence (PL) experiments allowed us to evaluate the impact of N incorporation during the growth of InAs/GaAs quantum dots. Previous work [V. Sallet et al., to be submitted to J. Cryst. Growth (2005); O. Schumann et al., J. Appl. Phys. 96, 2832 (2004)] showed that increasing the flux of N atoms into the growth chamber modifies drastically the size of the dots which leads to a bimodal growth. Two populations of dots with different sizes appear. The quantum dot PL line broadens and a second PL line appears at higher energy. Time resolved PL allows us to identify the nature of this second PL line: second population of quantum dots. A second decay time is observed which we interpret as being the consequence of the perturbation of the electronic states of the quantum dots.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

Thierry Taliercio, Pierre Valvin, Romuald Intartaglia, Vincent Sallet, J.C. Harmand, et al.. Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots. 5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. pp.2598-2603, ⟨10.1002/pssa.200562030⟩. ⟨hal-01309747⟩