Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipole

Richard Bardoux (1) , Thierry Guillet (1) , Pierre Lefebvre (1) , Thierry Taliercio (1) , Thierry Bretagnon (1) , Bernard Gil (1) , Fabrice Semond (2)

1 GES - Groupe d'étude des semiconducteurs
2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

We present single dot spectroscopy of hexagonal GaN/AlN self‐assembled quantum dots (QDs) grown by MBE along the (0001) axis. The GaN quantum dots are grown on an AlN epilayer on Si (111) substrate, with dot densities between 108 and 1011 cm−2. We study the micro‐photoluminescence spectra of a few quantum dots. In the energy range corresponding to the smaller dots we observe several groups of peaks, each group corresponding to the emission of a unique quantum dot. These groups are identified through their time‐correlated spectral diffusion. The measured linewidth of the transition is 2 meV (resolution limited).

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

Richard Bardoux, Thierry Guillet, Pierre Lefebvre, Thierry Taliercio, Thierry Bretagnon, et al.. Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipole . Wolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. ⟨10.1063/1.2730203⟩. ⟨hal-01309696⟩