Carrier relaxation dynamics for As defects in GaN. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2001

Carrier relaxation dynamics for As defects in GaN.

Résumé

Long decay times in the 50–150 ns range have been measured for the characteristic blue photoluminescence that peaks at 2.6 eV in GaN:As. We interpret these long decay times according to the theoretical predictions that this blue photoluminescence is caused by the incorporation of arsenic on the gallium site. The long decay times are characteristics of the large lattice relaxation for such a deep donor with a negative-U center behavior.
Fichier non déposé

Dates et versions

hal-01303208 , version 1 (16-04-2016)

Identifiants

Citer

Bernard Gil, Aurélien Morel, Thierry Taliercio, Pierre Lefebvre, C.T. Foxon, et al.. Carrier relaxation dynamics for As defects in GaN.. Applied Physics Letters, 2001, 79 (1), pp.69. ⟨10.1063/1.1380400⟩. ⟨hal-01303208⟩
22 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More