Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111)

H. F. Jurca , I. Mazzaro , W. H. Schreiner , D. H. Mosca , M. Eddrief (1) , Victor H. Etgens (1)

1 INSP - Institut des Nanosciences de Paris

Epitaxial lamellar gallium selenide (GaSe) semiconductors have been grown on trench-patterned silicon (Si) substrates by molecular beam epitaxy. An intriguing star-like patterned morphology was identified by atomic force microscopy on these epilayers. This non-trivial feature can be correlated with the accumulation of stacking faults of two concurrent epitaxial domains around self-oriented triangular pits developed earlier on the Si(111) surface by the chemical etching. Crystallographic considerations show how the stars can be formed. (c) 2006 Elsevier B.V. All rights reserved.

Mots clés: gallium selenide; atomic force microscopy; nucleation and growth; stacking faults

Domaines: Matière Condensée [cond-mat]

H. F. Jurca, I. Mazzaro, W. H. Schreiner, D. H. Mosca, M. Eddrief, et al.. Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111). Thin Solid Films, 2006, 515 (4), pp.1470-1474. ⟨10.1016/j.tsf.2006.04.017⟩. ⟨hal-01293049⟩