Hydrogen passivation of carbon P-b like centers at the 3C-and 4H-SiC/SiO2 interfaces in oxidized porous SiC

Jean-Louis Cantin (1) , Jurgen von Bardeleben (1) , Y Ke , Rp Devaty , Wj Choyke

1 INSP - Institut des Nanosciences de Paris

The effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (P-bC) centers at 3C- and 4H-SiC/SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400 degrees C and depassivation for temperatures above 850 degrees C. A dissociation energy of (4.3 +/- 0.3) eV has been determined for both polytypes. (c) 2006 American Institute of Physics.

Domaines: Matière Condensée [cond-mat]

Jean-Louis Cantin, Jurgen von Bardeleben, Y Ke, Rp Devaty, Wj Choyke. Hydrogen passivation of carbon P-b like centers at the 3C-and 4H-SiC/SiO2 interfaces in oxidized porous SiC. Applied Physics Letters, 2006, 88 (9), pp.092108. ⟨10.1063/1.2179128⟩. ⟨hal-01288817⟩