Quenching of the electronic spin relaxation and decoherence by localization on donors

G. Karczewski , J. Tribollet , Frédéric Bernardot (1) , Christophe Testelin (1) , Maria Chamarro (1) , Emmanuel Aubry

1 INSP - Institut des Nanosciences de Paris

In pump-probe experiments, we compare the spin relaxation and decoherence times of electrons bound on neutral donors inside an intrinsic CdTe quantum well (QW), with those of free electrons in a doped CdTe QW. We demonstrate that the localization of the electrons on donors, slows down the spin relaxation and the spin decoherence by two orders of magnitude.

Mots clés: quantum well; II-VI semiconductors; ultra-fast optical measurements

Domaines: Matière Condensée [cond-mat]

G. Karczewski, J. Tribollet, Frédéric Bernardot, Christophe Testelin, Maria Chamarro, et al.. Quenching of the electronic spin relaxation and decoherence by localization on donors. 28th International Conference on the Physics of Semiconductors (ICPS-28), Jul 2006, Vienna, Unknown Region. pp.1323-1324. ⟨hal-01288164⟩