Skip to Main content Skip to Navigation
Journal articles

Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics

Abstract : We provide a derivation allowing the calculation of thermal conductance at interfaces by equilibrium molecular dynamics simulations and illustrate our approach by studying thermal conduction mechanisms in Si/Ge superlattices. Thermal conductance calculations of superlattices with period thicknesses ranging from 0.5 to 60 nm are presented as well as the temperature dependence. Results have been compared to complementary Green-Kubo thermal conductivity calculations demonstrating that thermal conductivity of perfect superlattices can be directly deduced from interfacial conductance in the investigated period range. This confirms the predominant role of interfaces in materials with large phonon mean free paths.
Complete list of metadatas

https://hal-centralesupelec.archives-ouvertes.fr/hal-01285857
Contributor : Sebastian Volz <>
Submitted on : Wednesday, March 9, 2016 - 6:45:17 PM
Last modification on : Friday, July 3, 2020 - 9:28:03 AM

Links full text

Identifiers

Citation

Yann Chalopin, K. Esfarjani, A. Henry, Sebastian Volz, G. Chen. Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics. Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2012, 85 (19), ⟨10.1103/physrevb.85.195302⟩. ⟨hal-01285857⟩

Share

Metrics

Record views

173