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Interfacial electronic transport phenomena in single crystalline Fe-MgO-Fe thin barrier junctions

Abstract : Spin filtering effects in nano-pillars of Fe-MgO-Fe single crystalline magnetic tunnel junctions are explored with two different sample architectures and thin MgO barriers (thickness: 3-8 monolayers). The two architectures, with different growth and annealing conditions of the bottom electrode, allow tuning the quality of the bottom Fe/MgO interface. As a result, an interfacial resonance states (IRS) is observed or not depending on this interface quality. The IRS contribution, observed by spin polarized tunnel spectroscopy, is analyzed as a function of the MgO barrier thickness. Our experimental findings agree with theoretical predictions concerning the symmetry of the low energy (0.2 eV) interfacial resonance states: a mixture of Delta(1)-like and Delta(5)-like symmetries.
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Submitted on : Friday, March 4, 2016 - 2:44:39 PM
Last modification on : Thursday, February 25, 2021 - 11:04:26 AM

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R. B. Gangineni, Christine Bellouard, A. Duluard, B. Negulescu, C. Baraduc, et al.. Interfacial electronic transport phenomena in single crystalline Fe-MgO-Fe thin barrier junctions. Applied Physics Letters, American Institute of Physics, 2014, 104 (18), ⟨10.1063/1.4875386⟩. ⟨hal-01282868⟩

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