Injection and detection of a spin-polarized current in a light-emitting diode, Nature, vol.6, issue.1, p.787, 1999. ,
DOI : 10.1063/1.882695
Electrical spin injection in a ferromagnetic semiconductor heterostructure, Nature, vol.64, issue.6763, p.790, 1999. ,
DOI : 10.1103/PhysRevLett.64.3070
Spin-Polarized Light-Emitting Diode Based on an Organic Bipolar Spin Valve, Science, vol.104, issue.23, p.204, 2012. ,
DOI : 10.1103/PhysRevLett.104.236602
Optical communication of spin information between light emitting diodes, Applied Physics Letters, vol.98, issue.16, p.162508, 2011. ,
DOI : 10.1103/PhysRevB.81.115302
Spin-polarized light-emitting diodes and lasers, Journal of Physics D: Applied Physics, vol.40, issue.11, p.179, 2007. ,
DOI : 10.1088/0022-3727/40/11/R01
A spintronic source of circularly polarized single photons, Applied Physics Letters, vol.98, issue.11, p.112106, 2011. ,
DOI : 10.1088/0957-4484/21/27/274011
Circularly polarized fluorescence from light-emitting microcavities with sculptured-thin-film chiral reflectors, Optics Communications, vol.264, issue.1, p.235, 2006. ,
DOI : 10.1016/j.optcom.2006.02.025
Optical Orientation (North- Holland, 1984. ,
Spin injection and relaxation in ferromagnet-semiconductor heterostructures, Physical Review B, vol.50, issue.12, p.121301, 2005. ,
DOI : 10.1103/PhysRevB.70.205312
Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As???GaAs heterostructures, Applied Physics Letters, vol.86, issue.10, p.102107, 2005. ,
DOI : 10.1103/PhysRevB.68.245319
Shot Noise for Resonant Cooper Pair Tunneling, Physical Review Letters, vol.60, issue.11, p.116601, 2001. ,
DOI : 10.1103/PhysRevB.60.5737
Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor, Applied Physics Letters, vol.80, issue.7, p.1240, 2002. ,
DOI : 10.1016/S0022-2313(96)00139-1
Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier, Applied Physics Letters, vol.82, issue.23, p.4092, 2003. ,
DOI : 10.1103/PhysRevB.5.2273
Comparison of Fe/Schottky and Fe/Al2O3 tunnel barrier contacts for electrical spin injection into GaAs, Applied Physics Letters, vol.84, issue.21, p.4334, 2004. ,
DOI : 10.1103/PhysRevB.29.1748
Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact, Nature Physics, vol.97, issue.8, p.542, 2007. ,
DOI : 10.1143/JJAP.33.2317
Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics using MgO(100), Physical Review Letters, vol.20, issue.5, p.56601, 2005. ,
DOI : 10.1063/1.1787896
Electrical spin injection into p-doped quantum dots through a tunnel barrier, Applied Physics Letters, vol.80, issue.8, p.81111, 2007. ,
DOI : 10.1126/science.282.5386.85
MgO thickness dependence of spin injection efficiency in spin-light emitting diodes, Applied Physics Letters, vol.42, issue.15, p.152102, 2008. ,
DOI : 10.1038/nmat1257
URL : https://hal.archives-ouvertes.fr/hal-00343586
High speed pulsed electrical spin injection in spin-light emitting diode, Applied Physics Letters, vol.10, issue.14, p.141109, 2009. ,
DOI : 10.1063/1.1881789
Efficient electron spin injection in MnAs-based spin-light-emitting-diodes up to room temperature, Applied Physics Letters, vol.97, issue.4, p.41103, 2010. ,
DOI : 10.1063/1.3200961
tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs, Journal of Applied Physics, vol.114, issue.3, p.33507, 2013. ,
DOI : 10.1103/PhysRevB.86.184401
Remanent electrical spin injection from Fe into AlGaAs???GaAs light emitting diodes, Applied Physics Letters, vol.89, issue.7, p.72505, 2006. ,
DOI : 10.1103/PhysRevB.51.15964
Room temperature electrical spin injection in remanence, Applied Physics Letters, vol.93, issue.2, p.21117, 2008. ,
DOI : 10.1103/PhysRevB.56.R7076
Electrical Spin Injection in Perpendicular Magnetized FePt/MgO/GaAs Heterostructures at Room Temperature, Journal of Superconductivity and Novel Magnetism, vol.95, issue.6, p.405, 2007. ,
DOI : 10.1016/B978-0-444-86741-4.50007-X
Spin injection in silicon at zero magnetic field, Applied Physics Letters, vol.10, issue.3, p.32502, 2009. ,
DOI : 10.1103/PhysRevB.40.5683
URL : https://hal.archives-ouvertes.fr/cea-01055870
Spin injection at remanence into III-V spin light-emitting diodes using (Co/Pt) ferromagnetic injectors, Physical Review B, vol.86, issue.20, p.205314, 2012. ,
DOI : 10.1103/PhysRevB.86.144403
Strong perpendicular magnetic anisotropy in Ni/Co(111) single crystal superlattices, Applied Physics Letters, vol.94, issue.26, p.262504, 2009. ,
DOI : 10.1063/1.2890839
Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor, Physical Review B, vol.77, issue.18, p.184420, 2001. ,
DOI : 10.1063/1.127097
Spin injection from perpendicular magnetized ferromagnetic ??-MnGa into (Al,Ga)As heterostructures, Applied Physics Letters, vol.89, issue.11, p.112511, 2006. ,
DOI : 10.1103/PhysRevB.62.2051
MgO interfaces, Physical Review B, vol.57, issue.5, p.54401, 2011. ,
DOI : 10.1109/TMAG.2005.854763
URL : https://hal.archives-ouvertes.fr/hal-01576684
interfaces, Physical Review B, vol.166, issue.17, p.174403, 2013. ,
DOI : 10.1063/1.3057974
A perpendicular-anisotropy CoFeB???MgO magnetic tunnel junction, Nature Materials, vol.92, issue.9, p.721, 2010. ,
DOI : 10.1038/nmat2804
Spin torque switching of perpendicular Ta???CoFeB???MgO-based magnetic tunnel junctions, Applied Physics Letters, vol.98, issue.2, p.22501, 2011. ,
DOI : 10.1016/0375-9601(75)90174-7
Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB, Applied Physics Letters, vol.99, issue.10, p.102502, 2011. ,
DOI : 10.1063/1.3064162
sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction, Applied Physics Letters, vol.99, issue.1, p.12502, 2011. ,
DOI : 10.1063/1.3299009
The study of perpendicular magnetic anisotropy in CoFeB sandwiched by MgO and tantalum layers using polarized neutron reflectometry, Applied Physics Letters, vol.6, issue.20, p.202406, 2012. ,
DOI : 10.1063/1.1854418
Variation in the properties of the interface in a CoFeB???MgO???CoFeB tunnel junction during thermal annealing, Applied Physics Letters, vol.91, issue.10, p.102104, 2007. ,
DOI : 10.1063/1.2360189
Annealing effects on CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy, Journal of Applied Physics, vol.110, issue.3, p.33904, 2011. ,
DOI : 10.1016/j.physe.2009.11.110
Role of an interfacial FeO layer in the electric-field-driven switching of magnetocrystalline anisotropy at the Fe/MgO interface, Physical Review B, vol.81, issue.22, p.220409, 2010. ,
DOI : 10.1103/PhysRevB.73.125408
molecular dynamics for liquid metals, Physical Review B, vol.41, issue.1, p.558, 1993. ,
DOI : 10.1103/PhysRevB.41.1497
total-energy calculations using a plane-wave basis set, Physical Review B, vol.2, issue.16, p.11169, 1996. ,
DOI : 10.1016/0927-0256(94)90105-8
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set, Computational Materials Science, vol.6, issue.1, p.15, 1996. ,
DOI : 10.1016/0927-0256(96)00008-0
Correlation hole of the spin-polarized electron gas, with exact small-wave-vector and high-density scaling, Physical Review B, vol.43, issue.24, p.13298, 1991. ,
DOI : 10.1103/PhysRevA.43.4637
Projector augmented-wave method, Physical Review B, vol.44, issue.24, p.17953, 1994. ,
DOI : 10.1103/PhysRevB.44.13063
From ultrasoft pseudopotentials to the projector augmented-wave method, Physical Review B, vol.9, issue.3, p.1758, 1999. ,
DOI : 10.1103/PhysRevB.55.13479
Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes, Applied Physics Letters, vol.8, issue.19, p.3098, 2001. ,
DOI : 10.1063/1.1332826
Phonon-assisted recombination in Fe-based spin LEDs, Physical Review B, vol.33, issue.11, p.115308, 2006. ,
DOI : 10.1063/1.1416164
Spin dynamics in dilute nitride semiconductors at room temperature, Applied Physics Letters, vol.87, issue.25, p.252115, 2005. ,
DOI : 10.1103/PhysRevB.21.1569
Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector, Applied Physics Letters, vol.87, issue.26, p.262503, 2005. ,
DOI : 10.1016/B978-0-444-86741-4.50012-3
Room temperature spin relaxation length in spin light-emitting diodes, Applied Physics Letters, vol.99, issue.5, p.51102, 2011. ,
DOI : 10.1088/0953-8984/18/5/005
Control of light polarization using optically spin-injected vertical external cavity surface emitting lasers, Applied Physics Letters, vol.103, issue.25, p.252402, 2013. ,
DOI : 10.1364/OE.18.005008
URL : https://hal.archives-ouvertes.fr/hal-01142108