Switching field distributions with spin transfer torques in perpendicularly magnetized spin-valve nanopillars

D. B. Gopman (1) , D. Bedau (2) , Stéphane Mangin (3) , E. E. Fullerton (4, 5) , J. A. Katine (2) , A. D. Kent (1)

1 Department of Physics [New York]
2 HGST San Jose Research Center
3 IJL - Institut Jean Lamour
4 UC San Diego - University of California [San Diego]
5 LLNL - Lawrence Livermore National Laboratory

We present switching field distributions of spin-transfer-assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm x 300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current-dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate significantly from the double exponential shape predicted by the effective barrier model, beginning at applied currents as low as half of the zero field critical current. Barrier heights extracted from switching field distributions for currents below this threshold are a monotonic function of the current. However, the thermally induced switching model breaks down for currents exceeding the critical threshold.

Mots clés: 7560Jk; 7576+j; number(s): 8575Bb

Domaines: Science des matériaux [cond-mat.mtrl-sci]

D. B. Gopman, D. Bedau, Stéphane Mangin, E. E. Fullerton, J. A. Katine, et al.. Switching field distributions with spin transfer torques in perpendicularly magnetized spin-valve nanopillars. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (13), pp.99 - 99. ⟨10.1103/PhysRevB.89.134427⟩. ⟨hal-01282616⟩