Radiative recombination in GaN nanocrystals at high intensities of optical excitation

An Gruzintsev , An Red'Kin , Carlos Barthou (1)

1 INSP - Institut des Nanosciences de Paris

The spectra of spontaneous UV luminescence of GaN nanocrystals excited by optical pumping at power densities ranging from 50 W/cm(2) to 50 MW/cm(2) are studied. At room temperature, radiation peaks related to the emission of free excitons and recombination of electron-hole plasma are revealed. The spectral characteristics of the emission of the electron-hole plasma in GaN is studied in the wide temperature range of 77-550 K. (c) 2005 Pleiades Publishing, Inc.

Domaines: Matière Condensée [cond-mat]

An Gruzintsev, An Red'Kin, Carlos Barthou. Radiative recombination in GaN nanocrystals at high intensities of optical excitation. Fizika i tekhnika poluprovodnicov / Semiconductors, 2005, 39 (10), pp.1158-1161. ⟨10.1134/1.2085263⟩. ⟨hal-01281576⟩