Effect of chemical etching on the luminescent properties of zinc oxide nanorods

A. N. Gruzintsev (1) , A. N. Red'Kin (1) , E. E. Yakimov (1) , C. Barthou (2)

1 Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka 142432 Moscow Region, Russia.
2 INSP - Institut des Nanosciences de Paris

Vertically aligned ZnO nanorods grown on (100) Si substrates have been found to have a polycrystalline zinc oxide underlayer. After etching in a hydrochloric acid solution, the nanorods had smaller dimensions and pointed ends. As shown by exciton spectroscopy, the nanorods had a higher structural perfection and better luminescent properties in comparison with the underlayer. The 4.2-K luminescence spectra of the nanorods exhibit violet emission due to bound and interacting excitons. The low-temperature edge emission of the ZnO underlayer is shown to consist of lines due to electron-hole plasma recombination.

Domaines: Matière Condensée [cond-mat]

A. N. Gruzintsev, A. N. Red'Kin, E. E. Yakimov, C. Barthou. Effect of chemical etching on the luminescent properties of zinc oxide nanorods. Inorganic Materials / Neorganicheskie Materialy, 2008, 44 (9), pp.960-964. ⟨10.1134/S0020168508090112⟩. ⟨hal-01281543⟩