Low-Temperature Transport Properties of Bi-Substituted β-As<sub>2</sub>Te<sub>3</sub> Compounds - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Electronic Materials Année : 2016

Low-Temperature Transport Properties of Bi-Substituted β-As2Te3 Compounds

Judith Monnier
Eric Alleno
Christophe Candolfi
Anne Dauscher
Bertrand Lenoir

Résumé

β-As2Te3 belongs to the family of Bi2Te3-based alloys, a well-known class of efficient thermoelectric materials around room temperature. As2Te3 exists in two allotropic configurations: α- and β-As2Te3, of which only the latter crystallizes in the same rhombohedral structure as Bi2Te3. Herein, we report on substitution of Bi for As in the As2−xBixTe3 system with x = 0.0, 0.015, 0.025, and 0.035. These samples have been characterized by x-ray diffraction and scanning electron microscopy. The transport properties have been measured at low temperatures (5 K to 300 K) in both directions, parallel and perpendicular to the pressing direction. The results are compared with those obtained in previous study on samples substituted by Sn. Compared with Sn, Bi allows for a clear decrease in electrical resistivity while maintaining the thermal conductivity below 1 W m-1 K-1 over the whole temperature range. As a result, a comparable peak ZT value near 0.2 was obtained at room temperature.
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Dates et versions

hal-01279971 , version 1 (09-03-2023)

Identifiants

Citer

Jean-Baptiste Vaney, Julie Carreaud, Gaëlle Delaizir, Cédric Morin, Judith Monnier, et al.. Low-Temperature Transport Properties of Bi-Substituted β-As2Te3 Compounds. Journal of Electronic Materials, 2016, 45 (3), pp.1786-1791. ⟨10.1007/s11664-015-4227-1⟩. ⟨hal-01279971⟩
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