High-Gain Over 30% PAE Power Amplifier MMICs in 100 nm GaN Technology at Ka-Band Frequencies

Jérôme Chéron (1) , Michel Campovecchio (1) , Raymond Quéré (1) , Dirk Schwantuschke (2) , Ruediger Quay (2) , Oliver Ambacher (2)

1 XLIM-C2S2 - C2S2
2 Fraunhofer IAF - Fraunhofer Institute for Applied Solid State Physics

Two high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEMT MMIC technology at Ka-band frequencies are reported in this paper. They have also been designed in order to ensure high output power and high gain. In continuous-wave (CW) operation, the first three stage power amplifier provides 4.5 W of output power and 33% of power-added-efficiency (PAE) at 30 GHz. The first power amplifier has been mirrored and combined in order to reach higher output power levels. This second MMIC power amplifier provides 8.1 W of output power and 30% of PAE at 30 GHz.

Domaines: Electronique

Jérôme Chéron, Michel Campovecchio, Raymond Quéré, Dirk Schwantuschke, Ruediger Quay, et al.. High-Gain Over 30% PAE Power Amplifier MMICs in 100 nm GaN Technology at Ka-Band Frequencies . 45th European Microwave Conference - 10th European Microwave Integrated Circuits Conference, Sep 2015, Paris, France. pp 262-265, ⟨10.1109/EuMIC.2015.7345119⟩. ⟨hal-01279001⟩