Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen

C Sartel (1) , S Gautier (2) , Sidi Ould Saad Hamady (2) , Nabila Maloufi (3) , J Martin (4) , A Sirenko , A Ougazzaden (5)

1 UL - Université de Lorraine
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
3 LETAM - Laboratoire d'étude des textures et application aux matériaux
4 Instituto de Parasitología y Biomedicina
5 Georgia Tech Lorraine [Metz]

Domaines: Physique [physics]

C Sartel, S Gautier, Sidi Ould Saad Hamady, Nabila Maloufi, J Martin, et al.. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen. Superlattices and Microstructures, 2006, 40 (4), pp.476-482. ⟨hal-01276983⟩