Ammonia pretreatment influence on the defect properties of Cu (In, Ga) Se/sub 2/solar cells from admittance spectroscopy

Z Djebbour , A Dubois (1) , Sidi Ould Saad Hamady (2) , D Mencaraglia (3) , B Canava (4) , A Etcheberry , J Vigneron , Jf Guillemoles , D Lincot , M Deleplanque

1 LCPMR - Laboratoire de Chimie Physique - Matière et Rayonnement
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
3 UPMC - Université Pierre et Marie Curie - Paris 6
4 UVSQ - Université de Versailles Saint-Quentin-en-Yvelines

In thin film polycrystalline CdS/CIGS heterojunction solar cells, understanding the intrinsic and interface defect properties is crucial to optimize their performances. In this paper, we focus our attention on the CdS/CIGS hetero-interface at different stages of its formation. All investigations were carried out on CIGS co-evaporated samples elaborated in pilot-line conditions onto which the CdS layer was deposited by chemical bath deposition (CBD). This latter chemical process involves the use of a NH, solution that modifies the ClGS surface composition. In order to separate the respective role of the NH/sub 3/ bath and the CdS layer thickness , we have investigated samples elaborated with several NH/sub 3/ pretreatment time of CIGS surface prior to CdS deposition. Admittance spectroscopy was used to follow the evolution of the hetero-interface defects properties.

Domaines: Physique [physics]

Z Djebbour, A Dubois, Sidi Ould Saad Hamady, D Mencaraglia, B Canava, et al.. Ammonia pretreatment influence on the defect properties of Cu (In, Ga) Se/sub 2/solar cells from admittance spectroscopy. Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on, 2003, Unknown, Unknown Region. pp.388-391. ⟨hal-01276990⟩