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Article Dans Une Revue International Journal of Microwave and Wireless Technologies Année : 2015

Mechanical nanogap switch for low-power on-board electronics

Achref Yahiaoui
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Emilien Lemoine
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Arnaud Pothier
Pierre Blondy
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Résumé

This paper presents the design fabrication and measurement of a nanogap radio frequency microelectromechanical system (RF MEMS) metal-contact switch. The prosed device generates a relatively high contact force with a low actuation voltage using a dielectric layer between the actuation electrode and the moveable beam. The actuation voltage is decreased with good reliability of the device by scaling down the gap. Beam geometry optimization allowed reaching 126 micronewtons contact force with only 10 V bias voltage. The fabricated miniature switch (80 × 50 × 0.95 µm) has indeed a pull-down voltage of 6 V and a contact resistance <2 Ω with 10 V bias applied. By measuring the S-parameters, the up-state capacitance has been fitted to 22 fF. The remarkable figure-of-merit Ron × Cup = 44 fs reflects the good performance of the device. A cycling test showed the device operated for 90 min without any charging problem noted.
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Dates et versions

hal-01276112 , version 1 (18-02-2016)

Identifiants

  • HAL Id : hal-01276112 , version 1

Citer

Achref Yahiaoui, Emilien Lemoine, Arnaud Pothier, Pierre Blondy. Mechanical nanogap switch for low-power on-board electronics . International Journal of Microwave and Wireless Technologies, 2015, 7 (05), pp.515-520. ⟨hal-01276112⟩

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