Highly Integrated VO2- based Antenna for Frequency Tunability at Millimeter-Wave Frequencies

Laure Huitema (1) , Aurelian Crunteanu (2) , Hang Wong

1 XLIM-SRF - Systèmes RF
2 XLIM-RFEI - RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie

We report the monolithic integration of a metalinsulator material (vanadium dioxide, VO2) for realizing a frequency tunable antenna operating around 30 GHz. The design of the device is based on a slot antenna excited by a microstrip line having a length that can be conveniently varied using a VO2- based switch. Compared to existing commercial solutions, the proposed switches show better electrical properties at high frequencies, with low losses (<1 dB) and high isolation (>20 dB) up to 40 GHz. The simulation shows that the antenna can be tunable around 30 GHz

Mots clés: vanadium dioxide layers; metal-insulator transition; high-frequency switching; tunable slot antenna; millimeter waves.

Domaines: Electromagnétisme; Micro et nanotechnologies/Microélectronique; Matériaux

Laure Huitema, Aurelian Crunteanu, Hang Wong. Highly Integrated VO2- based Antenna for Frequency Tunability at Millimeter-Wave Frequencies. International Workshop on Antenna Technology (iWAT) 2016, Feb 2016, Hilton Cocoa Beach Oceanfront, FL, U.S.A., United States. ⟨hal-01274344⟩