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Article Dans Une Revue Physical Review Letters Année : 2016

Quantum thermal transistor

Karl Joulain
Jérémie Drevillon
Younes Ezzahri
Jose Ordonez-Miranda

Résumé

We demonstrate that a thermal transistor can be made up with a quantum system of 3 interacting subsystems , coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved determining the heat fluxes by means of the strong-coupling formalism. For the case of 3 interacting spins, in which one of them is coupled to the other 2, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nano systems.
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Dates et versions

hal-01272554 , version 1 (11-02-2016)
hal-01272554 , version 2 (12-02-2016)
hal-01272554 , version 3 (20-05-2016)

Licence

Paternité - Pas d'utilisation commerciale

Identifiants

Citer

Karl Joulain, Jérémie Drevillon, Younes Ezzahri, Jose Ordonez-Miranda. Quantum thermal transistor. Physical Review Letters, 2016, 116, pp.200601. ⟨10.1103/PhysRevLett.116.200601⟩. ⟨hal-01272554v3⟩
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