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Article Dans Une Revue Physica B: Condensed Matter Année : 1998

X-ray diffraction and reflectometry studies of porous silicon

Résumé

X-ray diffraction and reflectometry allows the measurements of various parameters (thickness, porosity, roughness and strain) of thin layers of porous silicon. Measurements on n-type porous silicon layers of different doping give very different results: for lightly doped samples, the layer properties vary smoothly as a function of formation time, while for heavily doped samples several regimes are observed for short formation times. X-ray satellites have been observed in the X-ray reflexion or diffraction from holographic gratings.

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hal-01256925 , version 1 (15-01-2016)

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Virginie Chamard, G. Dolino, Gilles Lerondel, S. Setzu. X-ray diffraction and reflectometry studies of porous silicon. Physica B: Condensed Matter, 1998, 248, pp.101-103. ⟨10.1016/S0921-4526(98)00211-7⟩. ⟨hal-01256925⟩

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