X-ray scattering study of porous silicon layers
Résumé
X-ray reflectivity is used to study the mesoscopic structure of porous silicon layers. For a porous silicon thin film, we present measurements of the specular and the diffuse scattering together with their best fits. The analysis of the scattered intensity within the distorted-wave Born approximation based on a model of rough fractal interface yields new structural information. Furthermore, an overview of experimental results obtained for several thick porous silicon samples (either as–formed or etched) is presented. The diffuse scattering exhibits characteristic effects due to large surface roughness and the porous structure.