Numerical simulation of InGaN Schottky solar cell

Abstract : The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potentiality to allow achieving high efficiency solar cells through the tuning of its band gap by changing the Indium composition. It also counts among its advantages a relatively low effective mass, high carriers’ mobility, a high absorption coefficient along with good radiation tolerance. However, the main drawback of InGaN is linked to its p-type doping, which is difficult to grow in good quality and on which ohmic contacts are difficult to realize. The Schottky solar cell is a good alternative to avoid the p-type doping of InGaN. In this report, a comprehensive numerical simulation, using mathematically rigorous optimization approach based on state-of-the-art optimization algorithms, is used to find the optimum geometrical and physical parameters that yield the best efficiency of a Schottky solar cell within the achievable device fabrication range. A 18.2% efficiency is predicted for this new InGaN solar cell design.
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https://hal.archives-ouvertes.fr/hal-01256060
Contributeur : Nicolas Fressengeas <>
Soumis le : jeudi 14 janvier 2016 - 12:20:42
Dernière modification le : lundi 15 mai 2017 - 13:46:33

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Sidi Ould Saad Hamady, Abdoulwahab Adaine, Nicolas Fressengeas. Numerical simulation of InGaN Schottky solar cell . Materials Science in Semiconductor Processing, Elsevier, 2016, 41, pp.219-225. 〈http://www.sciencedirect.com/science/article/pii/S1369800115301797〉. 〈10.1016/j.mssp.2015.09.001〉. 〈hal-01256060〉

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