Formation of porous silicon: in situ investigation with high-resolution x-ray diffraction

Virginie Chamard (1) , C. Pichat (1) , G. Dolino (1)

1 LSP - Laboratoire de Spectrométrie Physique

The single crystal property of p+ type porous silicon is used to investigate the formation mechanisms of this material by in situ X-ray diffraction. During anodisation, the diffraction peak of the porous silicon layer exhibits a lattice parameter expansion, with the usual value. For long anodisation time, a parasitic chemical dissolution leads to a regular and homogeneous decrease of lattice mismatch, also observed during pure chemical dissolution.

Domaines: Matière Condensée [cond-mat]

Virginie Chamard, C. Pichat, G. Dolino. Formation of porous silicon: in situ investigation with high-resolution x-ray diffraction. The European Physical Journal B: Condensed Matter and Complex Systems, 2001, 21 (2), pp.185-190. ⟨10.1007/s100510170194⟩. ⟨hal-01254202⟩