Structure and ordering of GaN quantum dot multilayers

Virginie Chamard (1) , T. H. Metzger , E. Bellet-Amalric , B. Daudin , C. Adelmann , H. Mariette , G. Mula

1 ESRF - European Synchrotron Radiation Facility

Grazing incidence x-ray techniques are used to characterize the structure of multilayered GaN quantum dots in an AlN matrix. For a dot lateral size of 170 Å, the values of the interdot vertical and lateral correlation lengths are 1500 and 250 Å, respectively. The presence of smaller quantum dots is observed only in the layers deposited first. The strain distribution in the multilayer is also investigated as a function of depth. Along the dot columns, the crystal lattice remains coherent, with elastic relaxation from the bottom to the top of the multilayer.

Domaines: Matière Condensée [cond-mat]

Virginie Chamard, T. H. Metzger, E. Bellet-Amalric, B. Daudin, C. Adelmann, et al.. Structure and ordering of GaN quantum dot multilayers. Applied Physics Letters, 2001, 79, pp.1971. ⟨10.1063/1.1403657⟩. ⟨hal-01253486⟩