InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems

Dominique Coquillat (1) , V. Nodjiadjim , A. Konczykowska , Nina Diakonova (1) , Christophe Consejo (1) , Sandra Ruffenach (1) , Frederic Teppe (1) , M. Riet , A. Muraviev , A. Gutin , M. Shur , J. Godin , Wojciech Knap (1)

1 L2C - Laboratoire Charles Coulomb

This paper presents terahertz detectors based on high performance 0.7-μm InP double heterojunction bipolar transistor (DHBT) technology and reports on the analysis of their voltage responsivity over a wide frequency range of the incoming terahertz radiation. The detectors operated without any spatial antennas to couple terahertz radiation to the device and have been characterized in the 0.25 - 3.1 THz range with the responsivities (normalized to 1 W radiant power) of 5 V/W and 200 μV/W measured at 0.35 THz and 3.11 THz, respectively. The InP DHBTs also performed as the imaging single-pixels at room temperature in the raster scanned transmission mode. A set of the sub-terahertz images of plant leaves suggest potential utility of InP DHBT detectors for terahertz imaging dedicated to non-invasive testing of plants.

Domaines: Physique Générale [physics.gen-ph]

Dominique Coquillat, V. Nodjiadjim, A. Konczykowska, Nina Diakonova, Christophe Consejo, et al.. InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems. 19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012036, ⟨10.1088/1742-6596/647/1/012036⟩. ⟨hal-01249949⟩