Metal-semiconductor transition in epitaxial ZnO thin films

M. Nistor , F. Gherendi , N. B. Mandache , C. Hebert , Jacques Perriere (1) , W. Seiler

1 INSP - Institut des Nanosciences de Paris

We report on the formation and transport properties of ZnO thin films which are grown by pulsed-electron beam deposition under a low residual oxygen pressure (10(-5) mbar). ZnO films presenting metallic conductivity at room temperature, and a metal-semiconductor transition at low temperature, were epitaxially grown on Al(2)O(3) single crystal substrates for growth temperatures in the 300-450 degrees C range. These results have been interpreted through the quantum corrections to conductivity in a disordered oxide conductor, implying first a high density of carriers leading to degenerate semiconductor ZnO films, and then a sufficient disorder in these films. These characteristics could be related to the nature of the ZnO films formed by pulsed-electron deposition: a high density of carriers related to an oxygen deficiency in the films and a high density of defects related to the high deposition rate of the pulsed-electron beam deposition method. (C) 2009 American Institute of Physics. [doi:10.1063/1.3259412]

Domaines: Matière Condensée [cond-mat]

M. Nistor, F. Gherendi, N. B. Mandache, C. Hebert, Jacques Perriere, et al.. Metal-semiconductor transition in epitaxial ZnO thin films. Journal of Applied Physics, 2009, 106 (10), pp.103710. ⟨10.1063/1.3259412⟩. ⟨hal-01240966⟩