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Nanocomposite indium tin oxide thin films: formation induced by a large oxygen deficiency and properties

Abstract : We report on the formation and properties of nanocomposite indium tin oxide thin films which are grown by pulsed-electron beam deposition under a low oxygen pressure leading to the formation of highly non-stoichiometric indium tin oxide films. For growth at room temperature these films are amorphous and insulating, while at higher temperatures, the oxygen deficiency leads to a disproportionation reaction with the formation of metallic clusters (indium or indium tin clusters) embedded in a stoichiometric crystalline indium tin oxide. This matrix is well crystallized and even epitaxial for growth on c-cut sapphire single crystal substrates. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity at room temperature followed by a superconducting transition at low temperature (about 6 K). Moreover, the solid-liquid and liquid-solid phase transitions in the metallic clusters can be clearly seen from the resistivity curves as a function of temperature (in the room temperature to 450 K range), through specific changes in resistivity and the appearance of a hysteresis cycle.
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Submitted on : Wednesday, December 9, 2015 - 5:22:18 PM
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M. Nistor, Jacques Perriere, C. Hebert, W. Seiler. Nanocomposite indium tin oxide thin films: formation induced by a large oxygen deficiency and properties. Journal of Physics: Condensed Matter, IOP Publishing, 2010, 22 (4), pp.045006. ⟨10.1088/0953-8984/22/4/045006⟩. ⟨hal-01240953⟩

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