Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth

M. E. Ikpi , Paola Atkinson (1) , S. P. Bremner , D. A. Ritchie

1 INSP - Institut des Nanosciences de Paris

The fabrication of a cross-wire p-i-n light emitting diode (LED) by molecular beam epitaxial overgrowth on mesa-patterned GaAs(100) substrates is presented. Micron-wide mesa stripes fabricated by standard photolithography are subsequently narrowed to sub-micron dimensions by GaAs overgrowth due to net migration towards the mesa top. Chains of InAs quantum dots (QDs) can then be grown in a self-aligned manner on top of the narrow GaAs ridge mesa, forming the active region of the QD-chain LED. The kinetics of the overgrowth is discussed and the electroluminescence operation of the LED is presented.

Domaines: Matière Condensée [cond-mat]

M. E. Ikpi, Paola Atkinson, S. P. Bremner, D. A. Ritchie. Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth. Nanotechnology, 2012, 23 (22), pp.225304. ⟨10.1088/0957-4484/23/22/225304⟩. ⟨hal-01240934⟩