Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots

K. D. Joens , Paola Atkinson (1) , M. Mueller , M. Heldmaier , S. M. Ulrich , O. G. Schmidt , P. Michler

1 INSP - Institut des Nanosciences de Paris

In this Letter, we present narrow line width (7 mu eV), nearly background-free single-photon emission (g((2))(0) = 0.02) and highly indistinguishable photons (V = 0.73) from site-controlled In(Ga)As/GaAs quantum dots. These excellent properties have been achieved by combining overgrowth on ex situ pit-patterned substrates with vertical stacking of spectrally distinct quantum dot layers. Our study paves the way for large-scale integration of quantum dots into quantum photonic circuits as indistinguishable single-photon sources.

Mots clés: Quantum dots; site-controlled; single photons; indistinguishability

Domaines: Matière Condensée [cond-mat]

K. D. Joens, Paola Atkinson, M. Mueller, M. Heldmaier, S. M. Ulrich, et al.. Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots. Nano Letters, 2013, 13 (1), pp.126-130. ⟨10.1021/nl303668z⟩. ⟨hal-01240521⟩