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Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain

Abstract : This work presents an experimental method to tune the degree of heavy-hole (HH) and light-hole (LH) mixing of the ground state of quantum dots (QDs). A ferroelectric crystal is used to apply reversible anisotropic biaxial stress to thin nanomembranes, containing GaAs/AlGaAs QDs. The stress-induced modification of the QD anisotropy leads to a change of the relative intensity of the two emission lines produced by the recombination of neutral bright excitonic states. Such a change is ascribed to a variation of the degree of HH-LH mixing. At the same time the modified anisotropy produces a change of the excitonic fine structure splitting (FSS). Model calculations provide a qualitative insight into the relation between strain, HH-LH mixing, and the FSS in epitaxial GaAs/AlGaAs QDs. DOI: 10.1103/PhysRevB.87.075311
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https://hal.archives-ouvertes.fr/hal-01240518
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Submitted on : Wednesday, December 9, 2015 - 11:59:51 AM
Last modification on : Wednesday, February 17, 2021 - 3:26:07 PM

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J. D. Plumhof, R. Trotta, V. Krapek, E. Zallo, Paola Atkinson, et al.. Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2013, 87 (7), pp.075311. ⟨10.1103/PhysRevB.87.075311⟩. ⟨hal-01240518⟩

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