Si(C)C(Si) Antisite Pairs as Dominant Irradiation Induced Defects in p-type 4H-SiC

U. Gerstmann , A. P. Seitsonen , F. Mauri , H. J. Von Bardeleben (1)

1 INSP - Institut des Nanosciences de Paris

In this work we elucidate the microscopic origin of the dominant radiation induced I-II spectra in p-type doped 4H-SiC. By calculating the electronic g-tensor from first principles in the framework of density functional theory, basal antisite pairs Si(C)C(Si)(+) are shown to give rise to the characteristic anisotropic g-tensors found in the electron paramagnetic resonance (EPR) measurements. Additional central hyperfine (hf) splittings of about 100 MHz due to the Si(C) antisite nuclei are predicted theoretically and also resolved experimentally. We have, thus, identified antisite pairs as a dominant defect in electron and proton irradiated p-type doped 4H-SiC.

Mots clés: paramagnetic resonance; g-tensor; hyperfine splitting; density functional theory

Domaines: Matière Condensée [cond-mat]

U. Gerstmann, A. P. Seitsonen, F. Mauri, H. J. Von Bardeleben. Si(C)C(Si) Antisite Pairs as Dominant Irradiation Induced Defects in p-type 4H-SiC. Silicon Carbide and Related Materials 2008, Sep 2008, Barcelone, Spain. pp.357-360. ⟨hal-01237488⟩