Ferromagnetism in Ga0.90Mn0.10As1-yPy: From the metallic to the impurity band conduction regime

M. Cubukcu (1) , H. J. Von Bardeleben (1) , J. L. Cantin , Ian Vickridge (1) , A. Lemaître (2)

1 INSP - Institut des Nanosciences de Paris
2 LPN - Laboratoire de photonique et de nanostructures

The magnetic properties of low temperature MBE grown Ga0.90Mn0.10As1 - yPy films with 00.15 it changes to impurity band conduction (IBC). In the IBC regime the main magnetic properties are profoundly modified: the saturation magnetization decreases from typically 50 emu/cm(3) to 35 emu/cm(3), the critical temperature drops sharply from 130 K to 45 K and the uniaxial magnetic anisotropy spectroscopy is strongly reduced. (C) 2011 Elsevier B.V. All rights reserved.

Mots clés: Ferromagnetism; Semiconductor; Impurity band; Ferromagnetic resonance

Domaines: Matière Condensée [cond-mat]

M. Cubukcu, H. J. Von Bardeleben, J. L. Cantin, Ian Vickridge, A. Lemaître. Ferromagnetism in Ga0.90Mn0.10As1-yPy: From the metallic to the impurity band conduction regime. Thin Solid Films, 2011, 519 (23, SI), pp.8212-8214. ⟨10.1016/j.tsf.2011.03.075⟩. ⟨hal-01237366⟩