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Study on the fabrication of CdZnSe/ZnSeS ternary alloy quantum dots

Abstract : In an effort to search for new compositions and structures of quantum dots with suppressed blinking photoluminescence (random switching between states of high (on) and low (off) emissivity under continuous photo-excitation) and to serve application purposes in biosensors and in optoelectronic devices, we have studied the fabrication of new CdZnSe/ZnSeS ternary alloy quantum dots (QD). In this work, we present new results on the fabrication of the alloy core/shell quantum dots having a shell thickness of about 1.52 nm and a varied shell composition in Se/S ratio. The influence of the growth temperature on the structural properties (crystalline phase and cell), size and elemental compositions of the core and core/shell QDs is presented. Analysis and in-depth comparison of the calculated ternary QDs' composition are performed based on the energy dispersive X-ray spectroscopy (EDS) data and the first exciton absorption peak position and size. Interpretation of the experimental results is also provided.
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Contributor : Gestionnaire Hal-Upmc <>
Submitted on : Wednesday, December 2, 2015 - 11:03:38 AM
Last modification on : Wednesday, February 26, 2020 - 8:24:05 PM



Pham Thu Nga, Nguyen Hai Yen, Dinh Hung Cuong, Nguyen Ngoc Hai, Nguyen Xuan Nghia, et al.. Study on the fabrication of CdZnSe/ZnSeS ternary alloy quantum dots. International Journal of Nanotechnology, Inderscience, 2015, 12 (5-7), pp.525-537. ⟨10.1504/IJNT.2015.067910⟩. ⟨hal-01236744⟩



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