A generic Reverse Conducting IGBT structure for monolithic switching cells integration

Adem Lale 1 Abdelhakim Bourennane 1 Abdelilah El Khadiry 1 Frederic Richardeau 2
1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 CS - Convertisseurs Statiques
LAPLACE - LAboratoire PLasma et Conversion d'Energie
Abstract : A generic structure of a Reverse Conducting IGBT (RC-IGBT) that integrates monolithically an IGBT for the forward conduction and a self-firing thyristor for the reverse conduction is proposed. As compared to the conventional RC-IGBT, the structure that we propose doesn’t exhibit snap-back in the forward conducting mode [1], [2]. The static and dynamic performances of the structure are investigated in this paper by 2D SentaurusTM numerical simulations. The proposed structure is then used to design two complementary monolithic power chips, named “Common Anode three-pole” and “Common Cathode three-pole”, within the context of “two-chip” integration of static power converter [4]. These two chips are then associated to form a complete inverter. The proposed three-pole common cathode chip uses a P+ wall for insulation between the two adjacent RC-IGBT sections. The proposed elementary RC-IGBT uses also the P+ wall in order to ensure the thyristor triggering in the reverse conducting mode.
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Adem Lale, Abdelhakim Bourennane, Abdelilah El Khadiry, Frederic Richardeau. A generic Reverse Conducting IGBT structure for monolithic switching cells integration. Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on., Aug 2014, Lappeenranta, Finland. ⟨10.1109/EPE.2014.6910977⟩. ⟨hal-01234236⟩

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