Electronic growth of Pb on the vicinal Si surface

D. A. Fokin (1) , S. I. Bozhko , V. Dubost , F. Debontridder (1) , A. M. Ionov , T. Cren (1) , D. Roditchev (1)

1 INSP - Institut des Nanosciences de Paris

We have studied the growth of Pb-islands on a clean vicinal surface of Si(557). Using the Scanning Tunneling Microscopy we show that while in general the growth follows the Stransky-Krastanov scenario, the peculiar structure of the formed Pb-islands and, in particular form and pancake-like layered structure that reflects the minimum in the total electron energy due to the quantum confinement. The Pb EG mode is apparently realized in the case of homoepitaxy during the topmost layer of the nanoisland growth. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Domaines: Matière Condensée [cond-mat]

D. A. Fokin, S. I. Bozhko, V. Dubost, F. Debontridder, A. M. Ionov, et al.. Electronic growth of Pb on the vicinal Si surface. physica status solidi (c), 2010, 7 (2), pp.165-168. ⟨10.1002/pssc.200982480⟩. ⟨hal-01233591⟩