S. Li, L. M. Tolbert, and F. Wang, Fang Zheng PengReduction of stray inductance in power electronic modules using basic switching cells, Energy Conversion Congress and Exposition 2010 IEEE, pp.2686-2691, 2010.

S. Li and L. M. Tolbert, Fei Wang; Fang Zheng PengStray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module, IEEE Transactions on, vol.29, issue.7, pp.3616-3624, 2014.

Z. Chen, . Yao, . Boroyevich, . Dushan, . Ngo et al., An ultra-fast SiC phase-leg module in modified hybrid packaging structure, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.2880-2886, 2014.
DOI : 10.1109/ECCE.2014.6953789

D. Reusch and J. Strydom, Understanding the effect of PCB layout on circuit performance in a high frequency gallium nitride based point of load converter Applied Power Electronics Conference and Exposition, IEEE, pp.649-655, 2013.

A. Khadiry, A. Bourennane, M. Breil, and F. Richardeau, Monolithically integrated switching cells suitable for high density power conversion " (ISPS'12), pp.222-227

D. Reusch, J. Strydom, and A. Lidow, Monolithic integration of GaN Transistors for Higher Efficiency and Power Density in DC-DC Converters, PCIM Europe, 2015.

K. Hara, S. Wada, J. Sakano, T. Oda, K. Sakurai et al., 600V single chip inverter IC with new SOI technology Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on, pp.418-433, 2014.
DOI : 10.1109/ispsd.2014.6856065

D. W. Green and E. Shankar-narayanan, Fully Isolated High Side and Low Side LIGBTs in Junction Isolation Technology", Power Semiconductor Devices and IC's, ISPSD 2006, IEEE International Symposium on, pp.1-4, 2006.

A. Lale, A. Bourennane, A. El-khadiry, and F. Richardeau, A generic Reverse Conducting IGBT structure for monolithic switching cells integration, 2014 16th European Conference on Power Electronics and Applications, pp.26-28, 2014.
DOI : 10.1109/EPE.2014.6910977

URL : https://hal.archives-ouvertes.fr/hal-01234236

A. Bourennane, H. Tahir, J. Sanchez, L. Pont, G. Sarrabayrouse et al., High temperature wafer bonding technique for the realization of a voltage and current bidirectional IGBT, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, pp.140-143, 2011.
DOI : 10.1109/ISPSD.2011.5890810

F. Baccar, F. L. Henaff, L. Theolier, S. Azzopardi, and E. Woirgard, Electrical characteristics evolution of the Deep Trench Termination diode based on a finite elements simulation approach", Thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (eurosime), 15th international conference on, 2014.

K. Seto, R. Kamibaba, M. Tsukuda, and L. Omura, Universal trench edge termination design, 2012 24th International Symposium on Power Semiconductor Devices and ICs, pp.161-164
DOI : 10.1109/ISPSD.2012.6229048

URL : https://kyutech.repo.nii.ac.jp/?action=repository_action_common_download&item_id=4574&item_no=1&attribute_id=17&file_no=1

R. Kamibaba, K. Takahama, and I. Omura, Design of trench termination for high voltage devices" Power Semiconductor Devices & IC's (ISPSD), 22nd International Symposium on, pp.107-110, 2010.

A. Lecestre, Anisotropic Deep Reactive Ion Etching without Aspect Ratio Dependence Etching for silicon power devices, PESM 2014 (Plasma Etch and Strip in Microtechnology), 2014.
URL : https://hal.archives-ouvertes.fr/hal-01054251

T. Rossignol, F. Senghor, D. Risaletto, J. Blaquière, F. Richardeau et al., Switching optimization of WBG power devices on inverter leg " dv/dt ? switching energy " trade off and comparison using directly the gate resistance or an additional feedback gate-drain capacitor, pp.16-18