Fang Zheng PengReduction of stray inductance in power electronic modules using basic switching cells, Energy Conversion Congress and Exposition 2010 IEEE, pp.2686-2691, 2010. ,
Fei Wang; Fang Zheng PengStray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module, IEEE Transactions on, vol.29, issue.7, pp.3616-3624, 2014. ,
An ultra-fast SiC phase-leg module in modified hybrid packaging structure, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.2880-2886, 2014. ,
DOI : 10.1109/ECCE.2014.6953789
Understanding the effect of PCB layout on circuit performance in a high frequency gallium nitride based point of load converter Applied Power Electronics Conference and Exposition, IEEE, pp.649-655, 2013. ,
Monolithically integrated switching cells suitable for high density power conversion " (ISPS'12), pp.222-227 ,
Monolithic integration of GaN Transistors for Higher Efficiency and Power Density in DC-DC Converters, PCIM Europe, 2015. ,
600V single chip inverter IC with new SOI technology Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on, pp.418-433, 2014. ,
DOI : 10.1109/ispsd.2014.6856065
Fully Isolated High Side and Low Side LIGBTs in Junction Isolation Technology", Power Semiconductor Devices and IC's, ISPSD 2006, IEEE International Symposium on, pp.1-4, 2006. ,
A generic Reverse Conducting IGBT structure for monolithic switching cells integration, 2014 16th European Conference on Power Electronics and Applications, pp.26-28, 2014. ,
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URL : https://hal.archives-ouvertes.fr/hal-01234236
High temperature wafer bonding technique for the realization of a voltage and current bidirectional IGBT, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, pp.140-143, 2011. ,
DOI : 10.1109/ISPSD.2011.5890810
Electrical characteristics evolution of the Deep Trench Termination diode based on a finite elements simulation approach", Thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (eurosime), 15th international conference on, 2014. ,
Universal trench edge termination design, 2012 24th International Symposium on Power Semiconductor Devices and ICs, pp.161-164 ,
DOI : 10.1109/ISPSD.2012.6229048
URL : https://kyutech.repo.nii.ac.jp/?action=repository_action_common_download&item_id=4574&item_no=1&attribute_id=17&file_no=1
Design of trench termination for high voltage devices" Power Semiconductor Devices & IC's (ISPSD), 22nd International Symposium on, pp.107-110, 2010. ,
Anisotropic Deep Reactive Ion Etching without Aspect Ratio Dependence Etching for silicon power devices, PESM 2014 (Plasma Etch and Strip in Microtechnology), 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-01054251
Switching optimization of WBG power devices on inverter leg " dv/dt ? switching energy " trade off and comparison using directly the gate resistance or an additional feedback gate-drain capacitor, pp.16-18 ,