Evaluation of Fine Structure of Excitonic Levels in InGaAs/InAs/GaAs Quantum Dots with the Detection Energy

N. Sellami , Adel Mellit , A. Sahli , M. A. Maaref (1) , Frédéric Bernardot (1) , Christophe Testelin (1)

1 INSP - Institut des Nanosciences de Paris

We have studied the fine structure in self-organized InGaAs/InAs/GaAs quantum dots. We have used the longitudinal magnetic field dependence of the circular polarization; this study allows us to calculate the exchange splitting. We have found that this splitting increases from 105 to 150 mu eV with increasing the detection energy. This increase has been interpreted by the fact that the splitting is essentially due to the anisotropic shape in this quantum dots.

Mots clés: Fine Structure; Circular Polarization; Anisotropic Exchange Splitting; Quantum Dot; Photoluminescence

Domaines: Matière Condensée [cond-mat]

N. Sellami, Adel Mellit, A. Sahli, M. A. Maaref, Frédéric Bernardot, et al.. Evaluation of Fine Structure of Excitonic Levels in InGaAs/InAs/GaAs Quantum Dots with the Detection Energy. Sensor letters, 2009, 7 (5, SI), pp.869-871. ⟨10.1166/sl.2009.1164⟩. ⟨hal-01229245⟩