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Raman scattering as a tool to characterize semiconductor crystals, thin layers, and low-dimensional structures containing transition metals

Abstract : Raman scattering is well known as an efficient, nondestructive experimental method to study a variety of physical properties of semiconductors. The sensitivity of modern Raman spectroscopy is illustrated by several results obtained for semiconductor bulk crystals, thin layers, or low-dimensional structures, containing selected transition metals. Among examples of Raman scattering data are detection of precipitates, a study of the influence of strain on phonon and magnon frequencies, and a search for magnetic excitations or for new phenomena, characteristic of low-dimensional structures are described. The presented examples concern a few materials, which attract today or have attracted in the past a lot of attention. This selection is limited to Mn and Co impurities and to such well-known semiconductor materials as MnTe, (Ga, Mn) As, ZnO, and ZnTe. [GRAPHICS] Comparison of the efficiency of Raman scattering on LO phonons (bottom right) with the PL efficiency for a semiconductor superlattice (upper left). The PL contribution to the total intensity due to the Cd0.88Zn0.12Te substrate is also shown. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Submitted on : Monday, November 16, 2015 - 1:38:56 PM
Last modification on : Tuesday, December 15, 2020 - 4:01:27 AM

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Wojciech Szuszkiewicz, Michel Jouanne, Jean-François Morhange, Makoto Kanehisa, Elzbieta Dynowska, et al.. Raman scattering as a tool to characterize semiconductor crystals, thin layers, and low-dimensional structures containing transition metals. physica status solidi (b), Wiley, 2014, 251 (6), pp.1133-1143. ⟨10.1002/pssb.201350142⟩. ⟨hal-01229139⟩

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